Investigation of mixed irradiation effects in p-MCz thin silicon microstrip detector for the HL-LHC experiments

A lot of R & D work is carried out in the CERN RD50 Collaboration to find best material for Si detectors that can be used harsh radiation environment HL-LHC, n and p-MCz was identified as one prime candidates a strip detector chosen phase 2 upgrade plan new Compact Muon Solenoid tracker 2026. For very first time, this work, an advanced four level deep-trap mixed irradiation model proposed by comparison experimental data on full depletion voltage leakage current Shockley Read Hall recombination statistics results irradiated PAD detector. In we have determined effective introduction rate {\eta}eff shallower donor deep trap E30 K using SRH theory calculations exp. Neff shown behavior space charges electric field distribution compared its value with -MCz microstrip Prediction uncertainty damage considered current. good agreement observed results. This models also extrapolate at different (proton + neutron) higher fluences thin